FFD04H60S
Hyperfast II Diode
www.fairchildsemi.com
2
?2008 Fairchild Semiconductor Corporation
FFD04H60S Rev. C1
Electrical Characteristics TC = 25oC
unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
VF1
IF
= 4 A
IF
= 4 A
TC = 25oC
TC = 125oC
-
-
-
-
2.1
1.7
V
IR1
VR
= 600 V
TC = 25oC
VR
= 600 V
TC = 125oC
-
-
-
-
100
200
?A
trr
IF
= 1 A, di
F/dt = 100 A/?s, VR
= 30V
IF
= 4 A, di
F/dt = 100 A/?s, VR
= 390V
TC = 25oC
TC = 25oC
-
-
19
25
-
60
ns
Irr
Qrr
IF
= 4 A, di
F/dt = 100 A/?s, VR
= 390V
TC = 25oC
-
-
1.5
18
-
-
A
nC
WAVL
Avalanche Energy ( L = 40 mH)
4
-
-
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
Test Circuit and Waveforms
Notes:
1: Pulse: Test Pulse width = 300?s, Duty Cycle = 2%
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